Fracture surface analysis and quantitative characterization of gallium arsenide III-V semiconductors using fractography

Gallium arsenide (GaAs) is used in the most demanding semiconductor applications, including medical, aerospace and communication industries, where significant mechanical stresses are experienced during operation. Mechanical from thermal expansion loading can result fracture of GaAs crystals, a leading cause device failure. Unfortunately, underlying mechanisms III-V semiconductors currently not well understood. In this manuscript, we present quantitative approach to identify main fractographic features correlate these crystal’s original strength. addition, detailed analysis was estimate crystal hackle constant (analogous mirror isotropic media), AXH110?221?= 1.58 MPa?m on {1 1 0} cleavage planes GaAs. Finally, stereography analytical geometry confirm that correspond intrinsic symmetries single-crystal